Download 2600 The Hacker Quarterly (Winter) by 2600 Magazine PDF

By 2600 Magazine

2600 journal is the world's most popular magazine on laptop hacking and technological manipulation and keep an eye on. released through hackers when you consider that 1984, 2600 is a real window into the minds of a few of modern-day such a lot inventive and clever humans. The de facto voice of a brand new iteration, this book has its finger at the pulse of the ever-changing electronic panorama. to be had for the 1st time in a electronic version, 2600 maintains to deliver designated voices to an ever becoming overseas neighborhood drawn to privateness concerns, laptop defense, and the electronic underground.

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44. H. Iwai, H. S. Momose, T. Morimoto, Y. Ozawa, and K. Yamabe, “Stacked-nitrided oxide gate MISFET with high hot-carrier-immunity,” IEDM Tech. , pp. 235–238, 1990 45. H. Yang and G. 0 nm) RPECVD oxynitride gate dielectrics into dual poly-Si gate submicron CMOSFETs,” IEDM Tech. , pp. 245–248, 1999. 46. M. Togo and T. 5 nm SiON gate-dielectric in sub-100 nm CMOS technology,” IEDM Tech. , pp. 637–640, 2000. 47. K. Matsuo, T. Saito, A. Yagishita, T. Iinuma, A. Murakoshi, K. Nakajima, S. Omoto, and K.

55. H. Takato, H. Koike, T. Yoshida, and H. Ishiuchi, “Process integration trends for embedded DRAM,” Proc. , “ULSI Process Integration,” pp. 107–119, 1999. 1 VLSI Circuits Eugene John Introduction The term very large scale integration (VLSI) refers to a technology through which it is possible to implement large circuits consisting of up to or more than a million transistors on semiconductor wafers, primarily silicon. Without the help of VLSI technology the advances made in computers and in the Internet would not have been possible.

Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, and H. Iwai, “Sub-50 nm gate length nMOSFETs with 10 nm phosphorus source and drain junctions,” IEDM Tech. , pp. 119–122, December, 1993. 5. H. S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S. Nakamura, M. Saito, and H. , pp. 593– 596, 1994. 6. C. Fiegna, H. Iwai, T. Wada, M. Saito, E. Sangiorgi, and B. 025 µm MOSFET,” Symp. , pp. 33–34, 1993. 7. T. Ohguro, K. Yamada, N. Sugiyama, K. Usuda, Y. Akasaka, T. Yoshitomi, C. Fiegna, M. Ono, M. Saito, and H.

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